monolithic microwave integrated circuit meaning in Chinese
单片式微波集成电路
Examples
- Tas semiconductor devices - technology approval schedule for monolithic microwave integrated circuits
半导体器件.单片微波集成电路的技术验收程序 - Tas semiconductor devices - part 16 - 10 : technology approval schedule for monolithic microwave integrated circuits
半导体器件.第16 - 10部分:单片型微波集成电路的技术验收程序 - Especially at millimeter - wave frequencies , power available from each monolithic microwave integrated circuit ( mmic ) is limited , and subsequent power combining is required to achieve the desired output power
特别是在毫米波频段,鉴于单个单片集成电路可能提供的功率有限,要提高系统的输出功率就需要采用功率合成技术。 - Monolithic microwave integrated circuit ( mmic ) designs on si substrates have become an important topic in recent years . with constantly increasing frequencies in communications and integrated circuits , there are great demands for low - cost , miniature microwave transmission lines
采用以硅材料为衬底及与ic兼容的微电子机械( mems )技术，能够实现微波无源分立元件与信号处理电路的单片集成化，最终形成完整的和智能化的在片系统。 - Especially , mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively . therefore , it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic
以液封直拉半绝缘gaas为衬底的金属半导体场效应晶体管( mesfet )器件是超大规模集成电路和单片微波集成电路广泛采用的器件结构，因此研究lec法生长si - gaas ( lecsi - gaas )衬底材料特性对mesfet器件性能的影响，对gaas集成电路和相关器件的设计及制造是非常必要的。